STGP20NB37LZ n-channel clamped 20a to-220 internally clamped powermesh ? igbt preliminary data n polysilicon gate voltage driven n low threshold voltage n low on-voltage drop n high current capability n high voltage clamping feature description using the latest high voltage technology based on patented strip layout, stmicroelectronics has designed an advanced family of igbts with outstanding performances. the built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an esd protection. applications n automotive ignition ? internal schematic diagram april 2000 absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v gs = 0) clamped v v ecr reverse battery protection 20 v v ge gate-emitter voltage clamped v i c collector current (continuous) at t c = 25 o c40a i c collector current (continuous) at t c = 100 o c30a i cm ( ) collector current (pulsed) 80 a e as single pulse energy tc = 25 o c700mj p tot total dissipation at t c = 25 o c150w derating factor 1 w/ o c e sd esd (human body model) 4 kv t stg storage temperature -65 to 175 o c t j max. operating junction temperature 175 o c ( ) pulse width limited by safe operating area type v ces v ce(sat) i c STGP20NB37LZ clamped < 2.0 v 20 a 1 2 3 to-220 1/6
thermal data r thj-case r thj-amb r thc-sink thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ 1 62.5 0.2 o c/w o c/w o c/w electrical characteristics (t j = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit bv (ces) clamped voltage i c =2ma v ge = 0 t c = - 40 o c i c =2ma v ge = 0 t c = 25 o c i c =2ma v ge = 0 t c = 150 o c 380 375 370 405 400 395 430 425 420 v v v bv (ecr) emitter collector break-down voltage i c = 75 ma t c = 25 o c20 28 v bv ge gate emitter break-down voltage i g = 2 ma 12 14 16 v i ces collector cut-off current (vge = 0) v ce = 15 v v ge = 0 t c = 150 o c v ce = 200 v v ge = 0 t c = 150 o c 10 100 m a m a i ges gate-emitter leakage current (vce = 0) v ge = 10 v v ce = 0 300 660 1000 m a r ge gate emitter resistance 10 15 30 k w on ( * ) symbol parameter test conditions min. typ. max. unit v ge(th) gate threshold voltage v ce = v ge i c = 250 m a t c = - 40 o c v ce = v ge i c = 250 m a t c = 25 o c v ce = v ge i c = 250 m a t c = 150 o c 1.2 1.0 0.6 1.4 2 v v v v ce(sat) collector-emitter saturation voltage v ge = 4.5 v i c = 10 a t c = 25 o c v ge = 4.5 v i c = 10 a t c = 150 o c v ge = 4.5 v i c = 20 a t c = 25 o c v ge = 4.5 v i c = 20 a t c = 150 o c 1.1 1.0 1.35 1.25 1.8 1.7 2.0 2.0 v v v v dynamic symbol parameter test conditions min. typ. max. unit g fs forward transconductance v ce = 25 v i c = 20 a 35 s c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce = 25 v f = 1 mhz v ge = 0 2300 165 28 pf pf pf q g gate charge v ce = 280 v i c = 20 a v ge = 5 v 51 nc STGP20NB37LZ 2/6
functional characteristics symbol parameter test conditions min. typ. max. unit ii latching current v clamp = 250 v v ge = 4.5 v r goff = 1 k w t c = 150 o c 80 a u.i.s. functional test open secondary coil r goff =1 k w l =3 mh t c = 25 o c r goff =1 k w l =3 mh t c = 150 o c 21.6 15 26 18 a a switching on symbol parameter test conditions min. typ. max. unit t d(on) t r delay time rise time v cc = 250 v i c = 20 a v ge = 4.5 v r g = 1 k w 2.3 0.6 m s m s (di/dt) on turn-on current slope v cc = 250 v i c = 20 a r g = 1 k w v ge = 4.5 v 550 a/ m s e on turn-on switching losses v cc =250v i c =20a t c = 25 o c r g =1 k w v ge =4.5v t c = 150 o c 8.8 9.2 mj mj switching off symbol parameter test conditions min. typ. max. unit t c t r (v off ) t f t d ( off ) e off (**) cross-over time off voltage rise time fall time off voltage delay time turn-off switching loss v cc = 250 v i c = 20 a r ge = 1 k w v ge = 4.5 v 4.8 2.6 2.0 11.5 11.8 m s m s m s m s mj t c t r (v off ) t f t d ( off ) e off (**) cross-over time off voltage rise time fall time off voltage delay time turn-off switching loss v cc = 250 v i c = 20 a r ge = 1 k w v ge = 4.5 v t c = 150 o c 7.8 3.5 3.9 12.0 17.8 m s m s m s m s mj ( ) pulse width limited by safe operating area (*) pulsed: pulse duration = 300 ms, duty cycle 1.5 % (**)losses incl ude also the tail (jedec standardization) STGP20NB37LZ 3/6
fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times STGP20NB37LZ 4/6
dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c STGP20NB37LZ 5/6
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malay sia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com STGP20NB37LZ 6/6
|
